INVESTIGATION OF DIFFUSION-DOPED SILICON WITH ZINC AND SELENIUM ATOMS

Abstract

The currently existing technological methods for obtaining semiconductor
materials for the development of efficient photocells with maximum efficiency and stable
electrical parameters have almost reached their limit. To further increase the main parameters
of photocells, it is necessary to use non-traditional properties of semiconductor materials or
requires discovered new physical phenomena. The modern development of micro- and
optoelectronics arouses interest in the synthesis of new materials, including those based on A3B5
and A2B6 semiconductor compounds. Since the band gap and lattice constant of such compounds
vary within certain limits, depending on the concentration of impurity atoms, which affects the
fundamental parameters of such materials. Based on them, it is possible to synthesize
semiconductor materials with a wide range of electrical and photoelectric properties, as well as
superlattices with quantum dots.